Inspection apparatus

ABSTRACT

An inspection apparatus and method for detecting defects and haze on a surface of a sample includes illumination optics which emit light to illuminate an inspection region on the surface of the sample from an oblique direction relative to the inspection region, first detection optics which detect first scattered light from the inspection region and having a beam analyzer through an optical path, second detection optics which detect second scattered light from the inspection region, the second scattered light being scattered from a direction different than a direction of the first scattered light, and a signal-processing unit which treats different processings for a first signal of the detected first scattered light and for a second signal of the detected second scattered light and detecting defects and haze on the surface of the sample on the basis of at least one of the first signal and the second signal.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.12/506,421, filed Jul. 21, 2009, now U.S. Pat. No. 8,120,766 thecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to an apparatus for inspecting microscopiccontamination, defects, and haze existing on the surfaces of samplessuch as semiconductor substrates.

In manufacturing lines for semiconductor substrates, thin-filmsubstrates, and the like, the defects and contamination existing on thesurfaces of semiconductor substrates, thin-film substrates, or the like,are inspected to maintain or improve respective product yield rates. Forexample, before circuit patterns are formed on samples such assemiconductor substrates, these samples require the detection ofmicroscopic surface defects and contamination of 0.05 microns or less indiameter. In order to detect these microscopic surface defects andcontamination, such a conventional inspection apparatus as described inPatent Document 1 (JP-H09-304289-A) irradiates the surface of a samplewith a laser beam condensed to several tens of microns, andacquires/detects the light scattered from defects or contamination. Inaddition, in conventional techniques for discriminating the kinds ofdefects, the directionality of the light scattered from a defect isdiscriminated by detecting the scattered light from multiple directions,as in Patent Document 1 (JP-2001-255278-A).

For even more accurate detection of defects and/or contamination, it isimportant to reduce the amount of light scattered by the roughness(haze) existing on the substrate surface. Techniques for implementingthe reduction are described in Patent Document 3 (U.S. Pat. No.6,034,776), Patent Document 4 (U.S. Pat. No. 6,639,662), and PatentDocument 5 (U.S. Pat. No. 7,002,677).

SUMMARY OF THE INVENTION

The distribution of the light scattered by defects as small as about1/10th of the illumination wavelength becomes isotropic. For thisreason, additive averaging of the signals that have been detected frommultiple directions improves a signal-to-noise (S-N) ratio, thusallowing micro-defect detection. Noise is shot noise due to thedetection of the scattered light originating from surface roughness, andthe shot noise is random noise. If the shot noise contained in thesignals that have been detected from multiple directions issubstantially of the same level between the signals, additive averagingwill reduce the noise level in proportion to the square root of thenumber of detecting directions. The intensity distribution of thescattered light originating from surface roughness, however, generallyhas an offset and thus since the shot noise contained in themulti-directionally detected signals is not uniform, additive averagingof these signals decreases in effectiveness.

The present invention provides an inspection apparatus intended to solvethe above problems, capable of detecting microscopically smallerdefects, and constructed to achieve even more accurate detection ofroughness.

The present invention focuses attention on the fact that the scatteredlight originating from the surface roughness of silicon or othermetallic films will be distributed more strongly at positions closer tothe starting position of the scattering. In perspective of this fact,the invention provides an inspection apparatus that detectsmicro-defects by using, of all signals that multi-azimuth andmulti-elevation angle detection optics has detected, only signalsprimarily of a forward-scattered beam of light, only a signal of theforward-scattered beam of light, only signals primarily of sideward- andbackward-scattered beams of light, or only a signal of thebackward-scattered beam of light.

Typical aspects of the invention that are disclosed in this applicationare outlined below.

(1) An inspection apparatus for detecting defects and haze on a surfaceof a sample comprises: illumination optics for emitting light toilluminate an inspection region on the surface of the sample from anoblique direction relative to the inspection region; first detectionoptics provided at one or a plurality of forward positions relative tothe direction of the illumination by the illumination optics, thedetection optics being adapted to detect the light scattered from theinspection region, in a forward direction relative to the direction ofthe illumination by the illumination optics; second detection opticsprovided at one or a plurality of sideward or backward positionsrelative to the direction of the illumination by the illuminationoptics, the detection optics being adapted to detect the light scatteredfrom the inspection region, in sideward or backward directions relativeto the direction of the illumination by the illumination optics; and asignal-processing unit for detecting defects on the surface of thesample on the basis of a signal detected by the first detection optics,the unit further detecting haze on the surface of the sample on thebasis of a signal detected by the second detection optics.

(2) The inspection apparatus according to above item (1), wherein thefirst detection optics has plural sets of forward detection optics; andthe signal-processing unit detects the defects on the surface of thesample by performing either additions, subtractions, divisions, oraveraging, between a plurality of signals obtained by the respectiveplural sets of forward detection optics, or by using a signal derivedfrom processing based upon a combination of the arithmetic operations.

(3) The inspection apparatus according to above item (1), wherein thesecond detection optics has plural sets of sideward detection optics orplural sets of backward detection optics; and the signal-processing unitdetects the haze on the surface of the sample by performing eitheradditions, subtractions, divisions, or averaging, between a plurality ofsignals obtained by the plural sets of sideward detection optics or theplural sets of backward detection optics, or by using a signal derivedfrom processing based upon a combination of the arithmetic operations.

(4) The inspection apparatus according to above item (1), wherein theillumination optics conducts illumination with p-polarized illuminationlight and the first detection optics detects only p-polarized componentsof the scattered light.

(5) An inspection apparatus for detecting defects and haze on a surfaceof a sample comprises: illumination optics for emitting light toilluminate an inspection region on the surface of the sample from anoblique direction relative to the inspection region; plural sets ofdetection optics arranged with at least a plurality of azimuth anglesdifferent from each other, the plural sets of detection optics beingadapted to detect in the lump the respective beams of light scatteredfrom the inspection region, at the respective arrangement angles; and asignal-processing unit for detecting defects on the surface of thesample on the basis of a signal obtained by performing a first weightingprocess between a plurality of signals detected by the respective pluralsets of detection optics, the unit further detecting haze on the surfaceof the sample on the basis of a signal obtained by performing a secondweighting process between the plurality of signals.

(6) The inspection apparatus according to above item (5), wherein: afterperforming a process such that a rate of a signal obtained by thedetection optics provided at one or plural forward positions relative tothe direction of the illumination by the illumination optics, to asignal obtained by the detection optics provided at one or pluralsideward or backward positions relative to the illuminating direction,will be great, the signal-processing unit detects the defects on thesurface of the sample on the basis of a signal obtained by adding thedetected signals.

(7) The inspection apparatus according to above item (5), wherein: afterperforming a process such that a rate of a signal obtained by thedetection optics provided at one or plural sideward or backwardpositions relative to the direction of the illumination by theillumination optics, to a signal obtained by the detection opticsprovided at one or plural forward positions relative to the illuminatingdirection, will be great, the signal-processing unit detects the haze onthe surface of the sample on the basis of a signal obtained by addingthe detected signals.

These and other objects, features and advantages of the invention willbe apparent from the following more particular description of preferredembodiments of the invention, as illustrated in the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side view of an inspection apparatus according to thepresent invention;

FIG. 2 is a plan view of low-angle detection optics in the inspectionapparatus according to the present invention;

FIG. 3 is a plan view of high-angle detection optics in the inspectionapparatus according to the present invention;

FIG. 4 is a diagram showing an example of a signal-processing circuit;

FIG. 5 is a diagram showing another example of a signal-processingcircuit;

FIG. 6 is a diagram showing an example of a signal-processing circuitfor achieving defect detection and haze detection;

FIG. 7 is a diagram showing an example of means for controlling asensitivity of a photomultiplier;

FIG. 8 is a diagram showing an example of an inspection flow in theinspection apparatus according to the present invention;

FIG. 9 is a diagram showing an example of a GUI screen display;

FIG. 10 is a diagram showing an example of a defect classificationprocessing circuit; and

FIG. 11 is an illustrative diagram of defect classification details.

DESCRIPTION OF THE EMBODIMENTS

An embodiment of an inspection apparatus according to the presentinvention will be described hereunder.

FIGS. 1, 2, 3 show an example of an inspection apparatus for detectingdefects/contamination on a semiconductor wafer that may exist beforecircuit patterns are formed thereon. FIG. 1 is a side view of theinspection apparatus, FIG. 2 is a plan view of low-angle detectionoptics, and FIG. 3 is a plan view of high-angle detection optics. Asshown in FIG. 1, the inspection apparatus according to the presentinvention includes illumination optics 101, detection optics 102including a plurality of sets of detection optics (such as 1102 a), awafer stage 103, a signal-processing unit 104, and a display unit 105.

The illumination optics 101 includes a laser light source 2, anattenuator 3, a beam expander 4, wave retarders 5, 6, mirrors 7 a, 7 b,and a condensing lens 8, as appropriate. An exit laser beam emitted fromthe laser light source 2 is controlled to a necessary amount of light bythe attenuator 3. Next after being expanded in diameter by the beamexpander 4, the laser beam is polarized in preset directions by the waveretarders 5, 6, and then changed in illumination optical path by themirrors 7 a, 7 b, as appropriate. The beam is then condensed by thecondensing lens 8 to illuminate a detection area on a wafer 1. The waveretarders 5, 6 change the polarization state of the illumination lightto s-polarization, p-polarization, or circular polarization, atappropriate timing. An illumination elevation angle θi of the obliqueillumination optics 101 here is desirably from 5 to 25 degrees. Acylindrical lens or the like may be used to obtain linear illuminationlight on the wafer 1.

The attenuator 3 is constructed using, for example, a half-wave retarderand a polarized beam splitter (hereinafter, called the PBS). The exitbeam (linearly polarized light) from the laser light source 2 isinclined at a polarizing angle by the half-wave retarder, thus changingin the amount of light when passed through the PBS. Rotation of thehalf-wave retarder changes the polarized-light axis, making the amountof light controllable.

The detection optics 102 is formed by a combination of multiple sets oflow-angle detection optics and high-angle detection optics, each set ofdetection optics including scattered-light detection lenses 9 (9 a-9 f),12 (12 a-12 d), beam analyzers 10 (10 a-10 f), 13 (13 a-13 d), andphotoelectric transfer elements 11 (11 a-11 f), 14 (14 a-14 d), asappropriate, so that the light scattered from a defect or contaminationpresent in the detection area of the wafer 1 will be condensedsubstantially on beam-receiving surfaces of the photoelectric transferelements 11, 14 by the detection lenses 9, 12. The photoelectrictransfer elements 11, 14 will each generate an electrical signal of amagnitude proportional to the amount of scattered light received, andthen process the signal via a signal-processing circuit (not shown) todetect the defect or contamination and hence a size and positionthereof. The photoelectric transfer elements 11, 14 used to receive thescattered light that has been condensed by the corresponding sets ofdetection optics, and transform the light into electrical signal form,are, for example, TV cameras, CCD linear sensors, TDI sensors, orphotomultipliers. The analyzers 10, 13 are used to detect onlycomponents polarized in specific directions, the polarized componentsbeing contained in the scattered light. A detection elevation angle(central angle) θ₁ of the low-angle detection optics desirably rangesfrom about 15 degrees to about 35 degrees, and a desirable detectionelevation angle (central angle) θ₂ of the high-angle detection opticsranges from about 45 degrees to about 70 degrees.

The wafer stage 103 includes a chuck 15 for holding the wafer 1, arotating mechanism 17 for rotating the wafer 1, and a rectilinear feedmechanism 16 for moving the wafer 1 rectilinearly in a radial direction.Contamination/defect detection in all regions of the wafer 1 becomespossible by performing horizontal rotational scanning and rectilinearmoving of the wafer with the wafer stage 103.

FIG. 2 is a plan view of the low-angle detection optics which forms partof the detection optics 102. Defects can be detected from multipledirections by arranging a plurality of sets of low-angle detectionoptics at azimuth angles different from each other. In this case, adesired signal can have its S-N ratio improved if one optimal signal ofall signals obtained by the photoelectric transfer elements of each setof detection optics is selected according to particular directionalityof the scattered-light intensity distribution or if additions,subtractions, divisions, averaging, or other arithmetic operations areperformed between a plurality of signals selected from the obtainedsignals. That is to say, since the scattered light originating from thehaze on the surface of the wafer 1 will be distributed more strongly atpositions closer to a starting position of the scattering,microscopically smaller defects can be detected at an improved S-N ratioby using only a signal that forward detection optics 1102 c or 1102 dfor detecting the light scattered forward with respect to theilluminating direction of the oblique illumination light has acquired,or by performing an addition and/or other processes between both signalsacquired by the forward detection optics 1102 c and 1102 d. Conversely,the haze can be detected using signals that have been acquired bysideward detection optics 1102 b and 1102 e or backward detection optics1102 a and 110 f for detecting the light scattered sideward or backward.In an alternative method of defect detection, the signals that each setof detection optics has acquired may be weighted according to the kindof object to be detected, and then the values may be provided withprocessing such as addition. The weighting may be associated with noiseintensity of each detected signal by relative comparison, for example,or can be performed by actively providing a difference in sensitivitybetween the photoelectric transfer elements in advance. Defect detectionat an improved S-N ratio, for instance, can be implemented byintegrating data so that a rate of the signals obtained by detectingforward scattered light, to the signals obtained by detecting sidewardor backward scattered light, will be great, and then using a valueobtained from adding these signals. Haze detection can be achieved byintegrating data so that a rate of the signals obtained by detectingsideward or backward scattered light, to the signals obtained bydetecting forward scattered light, will be great, and then using a valueobtained from adding these signals.

For the low-angle six-direction detection shown in the presentembodiment, approximate detection azimuth angles (central angles) withrespect to the illuminating direction desirably range from 20° to 50°(φ₁), −20° to −50° (φ₂), 70° to 110° (φ₃), −70° to −110° (φ₄), 130° to160° (φ₅), and −130° to −160° (φ₆). The detection form, however, is notlimited to six-direction detection, and provided that the plurality ofsets of detection optics are arranged at a plurality of azimuth anglesto allow detection from, for example, four directions or eightdirections, the number of sets of detection optics arranged and/or theazimuth angles may be changed as appropriate.

FIG. 3 is a plan view of the high-angle detection optics which formspart of the detection optics 102. Defects can be detected from multipledirections by arranging a plurality of sets of high-angle detectionoptics at azimuth angles different from each other. In this case, as inthe low-angle detection optics, the improvement of a desired signal inS-N ratio and/or the detection of haze can be achieved if one optimalsignal of all signals obtained by the photoelectric transfer elements ofeach set of detection optics is selected according to the particulardirectionality of the scattered-light intensity distribution or ifadditions, subtractions, divisions, averaging, or other arithmeticoperations are performed between a plurality of signals selected fromthe obtained signals. For the high-angle four-direction detection shownin the present embodiment, approximate desirable detection azimuthangles (central angles) with respect to the illuminating direction aredesirably ±10° (φ7), 80° to 110° (φ8), −80° to −110° (φ9), and 180°±10°(φ10). The detection form, however, is not limited to four-directiondetection and the number of sets of detection optics arranged and/or theazimuth angles can be changed as appropriate.

An example in which only the optimal signal of all signals acquired inthe multiple sets of low-angle detection optics is used according to theparticular directionality of the scattered-light intensity distributionor only better signals of all signals acquired in the multiple sets ofhigh-angle detection optics are selected as appropriate and undergoarithmetic addition, for example, has been shown and described in thepresent embodiment. The defect or haze detection form of the detectionoptics, however, is not limited to the above. The two kinds of detectionoptics may be adapted, for example, to detect defects or haze byselecting, as appropriate, only the optimal signal of all signalsacquired collectively in both the low-angle detection optics and thehigh-angle detection optics, or by selecting as appropriate andperforming additions upon only better signals of all acquired signals.In addition, combining the low-angle detection optics and the high-angledetection optics makes a dynamic range extendible by switching controlto the photoelectric transfer element 14 a if, for example, thephotoelectric transfer element 11 a saturates. Furthermore, as describedlater herein, the kind of defect can be discriminated by comparing thesignals of the low-angle detection optics and those of the high-angledetection optics. However, there is no absolute need for both themultiple sets of low-angle detection optics and the multiple sets ofhigh-angle detection optics to be provided, and microscopic defects andhaze are detectable by providing multiple sets of detection opticsoriented in at least two of the four directions (forward, sideward, andbackward) relative to the illuminating direction of obliqueillumination. While the elevation angle shown and described by way ofexample in the above embodiment has been the same between the multiplesets of low-angle detection optics or between the multiple sets ofhigh-angle detection optics, the elevation angle is not limited to thisexample and can differ between the multiple sets of low-angle or betweenthe multiple sets of high-angle detection optics.

FIG. 4 shows an example of a signal-processing scheme of the low-angledetection optics, employing photomultipliers as the photoelectrictransfer elements 11. The photomultipliers 11 require high-voltageapplication and are powered from a high-voltage DC power supply 19.Output signals from each photomultiplier 11 undergo current-voltageconversion and necessary voltage amplification before being added in anadder 20. In this sequence, the amplifiers 18 (18 a-18 f) regulateamplification factors of each photomultiplier to correct any differencesin sensitivity between the photomultipliers 11.

After removal of DC components and unnecessary noise components from anoutput signal of the adder 20 by a band-pass filter 21, this outputsignal is converted into a digital signal by an A/D converter 22. TheA/D converter 22 has its output compared with a threshold level by acomparator 23. If the threshold level is exceeded, the above digitalsignal level is stored with R·θ coordinates into a defect memory 26. Thethreshold level is assigned from a CPU (not shown) to a latch 24 via aninterface 25. Content of the defect memory 26 is read out from the CPUand then used for defect map display, defect classification, and otherpurposes. FIG. 5 shows an example of a signal-processing scheme of thehigh-angle detection optics, details of this scheme being the same asthe signal-processing scheme of the low-angle detection optics as shownin FIG. 4.

During p-polarized illumination, the intensity distribution of thescattered light originating from a micro-defect (measuring about ⅕ orless of the illumination wavelength) becomes isotropic and each detectedsignal (S) takes substantially the same value. The shot noise (N) outputfrom each photomultiplier 11 is random, with the output signal of thephotomultiplier 11 becoming S/N in signal-to-noise (S-N) ratio. Uponadditive averaging of all detected signals as shown in FIGS. 4 and 5, ifthe shot noise (N) output from each photomultiplier 11 is substantiallyof the same level, the shot noise will be averaged (a square root of thesecond sum will be extracted) to become 1/√6 (for six-directiondetection), which will improve the S-N ratios of each detected signal bya factor of √6, thus making micro-defect detection possible byindependent signal processing for each photomultiplier 11.

However, the scattered light originating from the surface roughness ofsilicon (Si) and metallic films such as tungsten (W) or copper (Cu),does not become isotropic and is distributed more strongly at positionscloser to a starting position of the scattering. If the scattered lightdue to the roughness detected by the photomultiplier 11 has an intensity“Su”, the shot noise occurring in the photomultiplier 11 will beproportional to √Su and forward detection (11 c, 11 d), sidewarddetection (11 b, 11 e), and backward detection (11 a, 11 f) will make√Su greater in that order. Even such additive averaging of themulti-directional detection signals as shown in FIGS. 4, 5, therefore,will not improve the respective S-N ratios and will only cause each tobe governed by the S-N ratio of a backward detection signal of a highernoise level.

An example of a signal-processing scheme in which the influence of theshot noise is reduced for improved S-N ratios is described below withreference to FIG. 6. The following description assumes thatp-polarization by which a strong electric field is obtainable near thewafer surface is used for illumination, that only forward scatteredlight, because of its small amount of roughness-originated scattering,is applied to defect detection, and that since sideward scattered lightand backward scattered light are large in the amount ofroughness-originated scattering, both sideward scattered light andbackward scattered light are applied to haze (roughness information)detection.

As shown in FIG. 6, signal processing that differs between forwardscattered light and sideward/backward scattered light takes place in thesignal-processing scheme of the signal-processing unit 104. For thedetection of forward scattered light, an adder 35 conducts additiveaveraging between the output signals of the amplifiers 18 c and 18 dconnected to output terminals of the photomultipliers 11 c and 11 d,respectively, provided in the detection optics sets 1102 c and 1102 dfor detecting the forward scattered light. After removal of DCcomponents and unnecessary noise components from an output signal of theadder 35 by a band-pass filter 36, this output signal is converted intoa digital signal by an A/D converter 37. The A/D converter 37 has itsoutput compared with a threshold level by a comparator 38. If thethreshold level is exceeded, the above digital signal level is storedwith R·θ coordinates into a defect memory 39. The threshold level isassigned from a CPU (not shown) to a latch 40 via an interface 41.Content of the defect memory 39 is read out from the CPU and then usedfor defect map display, defect classification, and other purposes.

For the detection of sideward/backward scattered light, an adder 42conducts additive averaging between the output signals of the amplifiers18 a, 18 b, 18 e, and 18 f connected to output terminals of thephotomultipliers 11 a, 11 b, 11 e, and 11 f, respectively, provided inthe detection optics sets 1102 a, 1102 b, 1102 e, and 1102 f fordetecting the sideward/backward scattered light. After removal ofhigh-frequency components from an output signal of the adder 42 by alow-pass filter 43, this output signal is converted into a digitalsignal by an A/D converter 44. The A/D converter 44 stores the digitalsignal level into a haze memory 46. The storage is performed insynchronization with a timing signal created on the basis of R·θcoordinates by a timing circuit 45. Content of the haze memory 46 isread out from the CPU (not shown) and then used for haze map display andother purposes. An example of adding all photomultiplier output signalshas been shown, but as described above, the present invention is notlimited to this example and only a part of the signals that has beenselected may be added or can undergo other appropriate arithmeticoperations such as subtraction, division, and/or averaging.

Scattered light due to roughness contains polarization information.Accordingly, insertion of the beam analyzers 10 c and 10 d into thedefect detection optics sets for detecting the defects that cause theforward scattered light reduces the amount of incidence of the scatteredlight due to roughness, hence improving the S-N ratio. When theillumination light is p-polarized light, an insertion angle of theanalyzers 10 c, 10 d is desirably that which lets the p-polarized lightpass through. Conversely for haze detection, since insertion ofanalyzers into the defect detection optics for detecting the haze thatcauses sideward/backward scattered light reduces the amount of hazeinformation as well, the analyzers 10 a, 10 b, 10 e, 10 f are desirablynot inserted into optical paths of these detection optics sets.

FIG. 7 shows an example of correcting the differences in sensitivitybetween the photomultipliers 11. Power units 49 (49 a-49 f) each controlan applied high voltage according to input voltage. The high voltage canbe supplied to each photomultiplier 11 by writing the voltage value intoa latch 47 via an interface 50 and after converting this value into avoltage signal using a D-A converter 48, assigning the signal to thepower unit 49. The sensitivity of the corresponding photomultiplier 11can be controlled from a CPU by changing the voltage value to be writteninto the latch 47. In addition, combined use of amplification factorcontrol by amplifiers 18 (18 a-18 f) facilitates the correction of thedifferences in sensitivity. For example, Model C4900, manufactured byHamamatsu Photonics K.K., can be used as the power unit 49.

Next, an example of an inspection flow using the present inspectionapparatus is described below using FIG. 8. First, an inspection recipeis acquired (step 801) and then a user assigns necessary parameters froma GUI screen to the apparatus (step 802). A wafer 1 is loaded onto thewafer stage 103 (step 803), and during illumination by the illuminationoptics, horizontally rotational scanning and rectilinear moving of thewafer 1 take place to start scans over its entire region (step 804).Defect data that has been obtained during the detection of forwardscattered light is input from a defect memory (step 805-1), and hazedata that has been obtained during the detection of sideward/backwardscattered light is input from a haze memory (step 805-2). Uponcompletion of the inspection, the wafer scans (rotation and single-axisfeed) are stopped (step 806) and the wafer 1 is unloaded (step 807).After this, a defect map and a haze map are displayed on the GUI screenas necessary (step 808).

Step 802 includes a substep in which the user designates which of themultiple sets of detection optics (e.g., seven directions of low-angledetection optics A1-A7) is to be assigned to detecting forward orsideward/backward scattered light. In this substep, the optics sets A3,A4, A5 may be assigned to detecting forward scattered light, and theoptics sets A1, A2, A6, A7 may be assigned to detectingsideward/backward scattered light. Also, step 804 includes a substep inwhich the scattered light is detected at a plurality of azimuth angleand elevation angle positions by the multiple sets of detection optics102, and step 805 includes the above-described signal-processing stepshown in FIG. 6. In addition, after the inspection, at least the defectmap 52 or/and the haze map 53 are displayed on the GUI screen that thedisplay unit 105 displays in step 808 as shown in FIG. 9, and a displaymap selection menu 50 for selecting the display of either or both of thetwo maps is also displayed when necessary.

FIG. 10 is a diagram showing an example of defect discrimination by thepresent inspection apparatus. A detection signal V_(L) is obtained byselecting one or more than one of the signals which have been detectedby the multiple sets of low-angle detection optics, or by performingadditions or other arithmetic operations upon all of these detectedsignals as appropriate. A detection signal V_(H) is obtained byselecting one or more than one of the signals which have been detectedby the multiple sets of high-angle detection optics or by performingadditions or other arithmetic operations upon all of these detectedsignals as appropriate. The ratio between V_(L) and V_(H) is computed ina processing circuit 55 and the computed value is written into thedefect memory 26. As shown in FIG. 11, if the computation result isplotted with V_(L) on a horizontal axis and V_(H) on a vertical axis,since concave defects such as crystal-originated pits (COPs) orscratches will be plotted in an upper area 57 from a threshold levelcurve 56, and convex defects such as contamination or other foreignsubstances, plotted in a lower area 58, appropriate discrimination ofthese concave and convex defects will be possible by setting thethreshold level curve 56. Concave defects are usually defects thatoriginally existed on silicon wafers or the like, and convex defects areusually defects that originated in the correspondingsemiconductor-manufacturing apparatus. Even at the same defect density,therefore, if convex defects outnumber concave ones, this usuallyindicates that there is something problematic with thesemiconductor-manufacturing apparatus.

While the invention by the present inventor has been described in detailabove on the basis of an embodiment, the invention is not limited to theembodiment and it goes without saying that the invention can be changedor modified in other various forms without departing from the scope ofthe invention.

According to the present invention, an inspection apparatus can beprovided that is able to detect microscopically smaller defects and todetect roughness very accurately.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The presentembodiment is therefore to be considered in all respects as illustrativeand not restrictive, the scope of the invention being indicated by theappended claims, rather than by the foregoing description, and allchanges that come within the meaning and range of equivalency of theclaims are therefore intended to be embraced therein.

1. An inspection apparatus for detecting defects and haze on a surfaceof a sample, the apparatus comprising: illumination optics which emitlight to illuminate an inspection region on the surface of the samplefrom an oblique direction relative to the inspection region; firstdetection optics which detect first scattered light from the inspectionregion on the surface of the sample and having a beam analyzer throughan optical path; second detection optics which detect second scatteredlight from the inspection region on the surface of the sample, thesecond scattered light being scattered from a direction different than adirection of first scattered light; and a signal-processing unit whichtreats different processings for a first signal of the detected firstscattered light and for a second signal of the detected second scatteredlight and detecting defects and haze on the surface of the sample on thebasis of at least one of the first signal and the second signal.
 2. Theinspection apparatus according to claim 1, wherein the signal processingunit detects defects on the basis of the first signal.
 3. The inspectionapparatus according to claim 1, wherein the signal processing unitdetects haze on the basis of the second signal.
 4. The inspectionapparatus according to claim 1, wherein the second detection optics hasno beam analyzer through an optical path.
 5. The inspection apparatusaccording to claim 1, wherein the first detection optics is provided atat least one forward position relative to the direction of theillumination by the illumination optics.
 6. The inspection apparatusaccording to claim 1, wherein the first detection optics detects thefirst scattered light scattering toward at least one forward positionrelative to the direction of the illumination by the illuminationoptics.
 7. The inspection apparatus according to claim 1, wherein thesecond detection optics is provided at at least one of one of a sidewardand backward position relative to the direction of the illumination bythe illumination optics.
 8. The inspection apparatus according to claim1, wherein the second detection optics detects the second scatteredlight scattering toward at least one of a sideward and backward positionrelative to the direction of the illumination by the illuminationoptics.
 9. The inspection apparatus according to claim 1, wherein thesignal processing unit detects defects on the basis of only the firstsignal.
 10. An inspection method for detecting defects and haze on asurface of the sample, comprising the steps of: illuminating light to aninspection region on the surface of the sample from an oblique directionrelative to the inspection region; detecting first scattered lightpassed through a beam analyzer from the inspection region on the surfaceof the sample; detecting second scattered light from the inspectionregion on the surface of the sample, the second scattered light beingscattered from a direction different than a direction of the firstscattered light; and processing with different processings for a firstsignal of the detected first scattered light and for a second signal ofthe detected second scattered light and detecting defects and haze onthe surface of the sample on the basis of the first signal and thesecond signal.
 11. The inspection method according to claim 10, whereinthe processing step detects defects on the basis of the first signal.12. The inspection method according to claim 10, wherein the processingstep detects haze on the basis of the second signal.
 13. The inspectionmethod according to claim 10, wherein the detecting second scatteredlight step detects the second scattered light without passing a beamanalyzer.
 14. The inspection method according to claim 10, wherein thedetecting first scattered light step detects the first scattered lightat at least one forward position relative to the direction of theillumination.
 15. The inspecting method according to claim 10, whereinthe detecting first scattered light step detects the first scatteredlight scattering toward at least one forward position relative to thedirection of the illumination.
 16. The inspection method according toclaim 10, wherein the detecting second scattered light step detects thesecond scattered light at at least one of one of a sideward and abackward position relative to the direction of the illumination.
 17. Theinspection method according to claim 10, wherein the detecting secondscattered light step detects the second scattered light scatteringtoward at least one of a sideward and a backward position relative tothe direction of the illumination.
 18. The inspection method accordingto claim 10, wherein the processing step detects defects on the basis ofonly the first signal.